The Design & Simulation of LNA for 2.4-2.5 GHz Using AWR Microwave Office  
  Authors : Osman Selcuk; Hamid Torpi

 

In this study, a low noise amplifier (LNA) design for 2.4-2.5 GHz application which is one of the most important interests in electronics/microwave engineering is designed. High-frequency microwave transistor ATF-54143 E-pHEMT is used to design low noise amplifier and its datasheet is used to match the input and output ports. A low noise and high gain amplifier is synthesized without any oscillations. In particular, the design of low noise amplifier requires optimization on the performance of the system.

 

Published In : IJCAT Journal Volume 5, Issue 8

Date of Publication : August 2018

Pages : 95-101

Figures :13

Tables :03

Publication Link :The Design & Simulation of LNA for 2.4-2.5 GHz Using AWR Microwave Office

 

 

 

Osman Selcuk : was born in 1991. In 2010, he started his undergraduate studies at the Department of Electrical and Electronics Engineering at Istanbul Haliç University Engineering Faculty and graduated in 2014. In 2014, he started to work both as an academic staff and graduate student at the Department of Electrical and Electronic Engineering of the Faculty of Engineering of Haliç University in Istanbul. He has been still studying Master of Computer Science at Monroe College New York.

Hamid Torpi : On March 7, 1967, Germany came to the world of the family of expatriates in the town of Kircheim Unter Teck in Stuttgart. He completed primary school in Private Worker Primary and Primary School, Private Yesilyurt Primary and Secondary School and Special Ideal Primary and Primary School respectively. He completed his first two years of secondary school in Fatih college and completed his last year in Yalova High School. He completed his high school education with his diploma in 1984 in Yalova High School. Between 1997-1999, research assistant Dr. He continued to work as a civil servant. In 1997, the same section was assigned to EM fields and Assistant Professor in the Department of Microwave Technology USA. Between 2005 and 2011 he served as Vice President of Department of Electronics and Communication Engineering. Meanwhile UCLA has also been working as a short-term researcher at irvine and Syracuse University NY (USA). He is currently serving as a member of the faculty of EM fields and Microwave Technology.

 

 

 

 

LNA, PHEMT, AWR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

In this work, the Low Noise Amplifier in the 2.4-2.5 GHz band is designed for WiMAX applications. This designed amplifier takes into consideration the frequency range of 2.4-2.5 GHz. Amplifier designs made on this frequency range; wireless communication devices.

 

 

 

 

 

 

 

 

 

[1] T. R. Lenka, and A. K. Panda "Characteristics Study of Modulation Doped GaAs/InxGa1-xAs/AlxGa1-xAs based Pseudomorphic HEMT," International Journal of Recent Trends in Engineering, Vol 1, No. 3, May 2009. [2] S. Mohammad and H. Morkoc, "Base Transit Time of GaN/InGaN Heterojunction Bipolar Transistors,'' J.Appl.Phys., vol. 78, no. 6, pp. 4200-4205, 1995. [3] T. Hamid, "LNA Design", M.S. thesis, Electrical Engineering, Yildiz Technical University, Istanbul, 1992. [4] I. Sisman, "Design and Implementation of a Microstrip Low Noise Amplifier in the UHF Band", Applied Computational Electromagnetics (ACES), 2014-January. [5] D.K. Shaeffer, T.H. Lee," A 1.5-V, 1.5-GHz CMOS low noise amplifier" IEEE Journal of Solid-State Circuits vol.32, Issue: 5, May 1997. [6] S.K. Hampel, O. Schmitz, M. Tiebout, I. Rolfes, "Inductorless 1-10.5 GHz wideband LNA for multistandard applications", Solid-State Circuits Conference 2009. A-SSCC 2009. IEEE Asian, pp. 269-272, 2009. [7] O. Selcuk and T.Imeci "A stripline low pass filter" Applied Computational Electromagnetics (ACES), 2015 31st International Review of Progress in IEEE, pp.1-2, 2015/3/22.